Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer
Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al2O3 layer. The wavegu...
| Main Authors: | , , , , |
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| Format: | Article |
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Springer
2024
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| Online Access: | http://psasir.upm.edu.my/id/eprint/105732/ |
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| author | Seven, E. Orhan, E.Öz Di Bartolomeo, A. Ertuğrul, M. Taştekin, N. Avişhan |
| author_facet | Seven, E. Orhan, E.Öz Di Bartolomeo, A. Ertuğrul, M. Taştekin, N. Avişhan |
| author_sort | Seven, E. |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al2O3 layer. The waveguide is fabricated by etching a silicon-on-insulator (SOI) substrate with 220 nm Si and 1.5 μm buried oxide. The 5 nm-thick Al2O3 film is deposited by atomic layer deposition (ALD), while graphene, synthesized on copper by chemical vapor deposition (CVD), is transferred onto the Al2O3/Si rib by a wet transfer method. The MLGr/Al2O3/Si rib forms a Schottky structure with rectifying current–voltage characteristics, which are examined using the thermionic emission theory and Norde’s method. A Schottky barrier height Φ B= 0.79 eV , an ideality factor n = 26, and a series resistance R S= 11.6 M Ω are obtained. The device is promising for operation at the optical fiber communication wavelength of 1550 nm. |
| first_indexed | 2025-11-15T13:51:16Z |
| format | Article |
| id | upm-105732 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T13:51:16Z |
| publishDate | 2024 |
| publisher | Springer |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-1057322024-05-30T07:17:41Z http://psasir.upm.edu.my/id/eprint/105732/ Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer Seven, E. Orhan, E.Öz Di Bartolomeo, A. Ertuğrul, M. Taştekin, N. Avişhan Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al2O3 layer. The waveguide is fabricated by etching a silicon-on-insulator (SOI) substrate with 220 nm Si and 1.5 μm buried oxide. The 5 nm-thick Al2O3 film is deposited by atomic layer deposition (ALD), while graphene, synthesized on copper by chemical vapor deposition (CVD), is transferred onto the Al2O3/Si rib by a wet transfer method. The MLGr/Al2O3/Si rib forms a Schottky structure with rectifying current–voltage characteristics, which are examined using the thermionic emission theory and Norde’s method. A Schottky barrier height Φ B= 0.79 eV , an ideality factor n = 26, and a series resistance R S= 11.6 M Ω are obtained. The device is promising for operation at the optical fiber communication wavelength of 1550 nm. Springer 2024 Article PeerReviewed Seven, E. and Orhan, E.Öz and Di Bartolomeo, A. and Ertuğrul, M. and Taştekin, N. Avişhan (2024) Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer. Indian Journal of Physics, 423. art. no. 137374. pp. 1-11. ISSN 0973-1458; ESSN: 0974-9845 https://link.springer.com/article/10.1007/10.1016/j.foodchem.2023.137374s12648-023-03062-7 10.1016/j.foodchem.2023.137374 |
| spellingShingle | Seven, E. Orhan, E.Öz Di Bartolomeo, A. Ertuğrul, M. Taştekin, N. Avişhan Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title | Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title_full | Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title_fullStr | Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title_full_unstemmed | Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title_short | Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| title_sort | graphene/al2o3/si schottky diode with integrated waveguide on a silicon-on-insulator wafer |
| url | http://psasir.upm.edu.my/id/eprint/105732/ http://psasir.upm.edu.my/id/eprint/105732/ http://psasir.upm.edu.my/id/eprint/105732/ |