Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

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Failure Analysis Investigation on 2N7002LTI TMOS Device Due to Electrostatic Discharge (ESD) Failures

The common failures in the electronic devices e.g. Metal Oxide Semiconductor(MOS), and T type Metal Oxide Semiconductor Field Effect Transistor (TMOS) are due to Electrostatic Discharge(ESD) and Electrical Overseers(EOS). A review is carried out giving an account of various types of failures and f...

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Bibliographic Details
Main Author:	Abdul Manaf, Abdul Halim
Format:	Thesis
Language:	English English
Published:	1998
Subjects:	Semiconductors - Failures - Case studies
Online Access:	http://psasir.upm.edu.my/id/eprint/10121/ http://psasir.upm.edu.my/id/eprint/10121/1/FK_1998_5_A.pdf

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