Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI

Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI

For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI and DTI technique. Earlier leakage had been f...

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Bibliographic Details
Main Authors: Kho Ching Tee, Elizabeth, Alexander, Hölke, Steven John, Pilkington, Deb Kumar, Pal, Ng, Liang Yew, Wan Azlan, Bin Wan Zainal Abidin, Marina, Antoniou, Florin, Udrea
Format: Article
Published: ENCON 2013 2013
Subjects:
Q Science (General)
Online Access:http://ir.unimas.my/id/eprint/8166/

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