Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI
For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI and DTI technique. Earlier leakage had been f...
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| Format: | Article |
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ENCON 2013
2013
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| Online Access: | http://ir.unimas.my/id/eprint/8166/ |
| _version_ | 1848836316484075520 |
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| author | Kho Ching Tee, Elizabeth Alexander, Hölke Steven John, Pilkington Deb Kumar, Pal Ng, Liang Yew Wan Azlan, Bin Wan Zainal Abidin Marina, Antoniou Florin, Udrea |
| author_facet | Kho Ching Tee, Elizabeth Alexander, Hölke Steven John, Pilkington Deb Kumar, Pal Ng, Liang Yew Wan Azlan, Bin Wan Zainal Abidin Marina, Antoniou Florin, Udrea |
| author_sort | Kho Ching Tee, Elizabeth |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI and DTI technique. Earlier leakage had been found during development of 200V superjunction lateral IGBT (SJ LIGBT) that fabricated on SOI wafer. The purpose of this work is to identify the root cause and propose the solutions. This is done by 2D simulations and the proposed solution had successfully solved the earlier leakage problem and yield high breakdown voltage of 220V. |
| first_indexed | 2025-11-15T06:21:50Z |
| format | Article |
| id | unimas-8166 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| last_indexed | 2025-11-15T06:21:50Z |
| publishDate | 2013 |
| publisher | ENCON 2013 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-81662015-07-02T06:28:47Z http://ir.unimas.my/id/eprint/8166/ Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI Kho Ching Tee, Elizabeth Alexander, Hölke Steven John, Pilkington Deb Kumar, Pal Ng, Liang Yew Wan Azlan, Bin Wan Zainal Abidin Marina, Antoniou Florin, Udrea Q Science (General) For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI and DTI technique. Earlier leakage had been found during development of 200V superjunction lateral IGBT (SJ LIGBT) that fabricated on SOI wafer. The purpose of this work is to identify the root cause and propose the solutions. This is done by 2D simulations and the proposed solution had successfully solved the earlier leakage problem and yield high breakdown voltage of 220V. ENCON 2013 2013 Article PeerReviewed Kho Ching Tee, Elizabeth and Alexander, Hölke and Steven John, Pilkington and Deb Kumar, Pal and Ng, Liang Yew and Wan Azlan, Bin Wan Zainal Abidin and Marina, Antoniou and Florin, Udrea (2013) Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI. ENCON 2013. http://rpsonline.com.sg/proceedings/9789810760595/html/024.xml doi: 10.3850/978-981-07-6059-5_024 |
| spellingShingle | Q Science (General) Kho Ching Tee, Elizabeth Alexander, Hölke Steven John, Pilkington Deb Kumar, Pal Ng, Liang Yew Wan Azlan, Bin Wan Zainal Abidin Marina, Antoniou Florin, Udrea Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title | Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title_full | Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title_fullStr | Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title_full_unstemmed | Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title_short | Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI |
| title_sort | methods to suppress earlier leakage in 200v superjunction ligbt on partial soi |
| topic | Q Science (General) |
| url | http://ir.unimas.my/id/eprint/8166/ http://ir.unimas.my/id/eprint/8166/ http://ir.unimas.my/id/eprint/8166/ |