Modeling MOSFETs by using C++
The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for th...
| Main Author: | |
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| Format: | Final Year Project Report / IMRAD |
| Language: | English English |
| Published: |
Universiti Malaysia Sarawak, UNIMAS
2009
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| Subjects: | |
| Online Access: | http://ir.unimas.my/id/eprint/6536/ http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf |
| _version_ | 1848835937056849920 |
|---|---|
| author | Roy Stephen, Joel Jimbai. |
| author_facet | Roy Stephen, Joel Jimbai. |
| author_sort | Roy Stephen, Joel Jimbai. |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | The Metal Oxide Semiconductor Field
-
Effect Transistors (MOSFET) has
become by far the most widely used electronic devices, especially in the design of
integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The
reason for the label metal-oxide-
semiconductor FET is:
metal
for the drains source and
gate connection to the proper surface
-
in particular, the gate terminal and the control to
be offered by the surface are of the contact, structure on which the n-and p-type regions
are diffused. Thus, in this paper, the characteristics of the MOSFETs are briefly
discussed at which one of the objectives is to model these characteristics by using
software,
Microsoft Visual C++
and in this project, the drain characteristics of both NMOS and PMOS is modelled
. As goes further this paper, the created
C++
programming
for the inverter which are then further implement to verify the operation
of pairs of gate logics ; AND/NAND, OR/NOR and XOR/XNOR
and also Half - Adder.
Nevertheless, the constraints faced by the author are concluded and few
recommendations are
suggested for future apprentices. |
| first_indexed | 2025-11-15T06:15:48Z |
| format | Final Year Project Report / IMRAD |
| id | unimas-6536 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T06:15:48Z |
| publishDate | 2009 |
| publisher | Universiti Malaysia Sarawak, UNIMAS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-65362024-03-18T04:31:59Z http://ir.unimas.my/id/eprint/6536/ Modeling MOSFETs by using C++ Roy Stephen, Joel Jimbai. T Technology (General) TK Electrical engineering. Electronics Nuclear engineering The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for the label metal-oxide- semiconductor FET is: metal for the drains source and gate connection to the proper surface - in particular, the gate terminal and the control to be offered by the surface are of the contact, structure on which the n-and p-type regions are diffused. Thus, in this paper, the characteristics of the MOSFETs are briefly discussed at which one of the objectives is to model these characteristics by using software, Microsoft Visual C++ and in this project, the drain characteristics of both NMOS and PMOS is modelled . As goes further this paper, the created C++ programming for the inverter which are then further implement to verify the operation of pairs of gate logics ; AND/NAND, OR/NOR and XOR/XNOR and also Half - Adder. Nevertheless, the constraints faced by the author are concluded and few recommendations are suggested for future apprentices. Universiti Malaysia Sarawak, UNIMAS 2009 Final Year Project Report / IMRAD NonPeerReviewed text en http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf text en http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf Roy Stephen, Joel Jimbai. (2009) Modeling MOSFETs by using C++. [Final Year Project Report / IMRAD] (Unpublished) |
| spellingShingle | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering Roy Stephen, Joel Jimbai. Modeling MOSFETs by using C++ |
| title | Modeling MOSFETs by using C++ |
| title_full | Modeling MOSFETs by using C++ |
| title_fullStr | Modeling MOSFETs by using C++ |
| title_full_unstemmed | Modeling MOSFETs by using C++ |
| title_short | Modeling MOSFETs by using C++ |
| title_sort | modeling mosfets by using c++ |
| topic | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering |
| url | http://ir.unimas.my/id/eprint/6536/ http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf |