S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler
S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam...
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| Format: | Article |
| Language: | English |
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Institute of Advanced Engineering and Science
2017
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| Online Access: | http://ir.unimas.my/id/eprint/18929/ http://ir.unimas.my/id/eprint/18929/2/S-Bend.pdf |
| _version_ | 1848838612468105216 |
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| author | Nurdiani, Zamhari Abang Annuar, Ehsan Mohd Syuhaimi, Abd Rahman |
| author_facet | Nurdiani, Zamhari Abang Annuar, Ehsan Mohd Syuhaimi, Abd Rahman |
| author_sort | Nurdiani, Zamhari |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system. Copyright © 2017 Institute of Advanced Engineering and Science. All rights reserved. |
| first_indexed | 2025-11-15T06:58:19Z |
| format | Article |
| id | unimas-18929 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T06:58:19Z |
| publishDate | 2017 |
| publisher | Institute of Advanced Engineering and Science |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-189292022-06-22T07:35:56Z http://ir.unimas.my/id/eprint/18929/ S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler Nurdiani, Zamhari Abang Annuar, Ehsan Mohd Syuhaimi, Abd Rahman TK Electrical engineering. Electronics Nuclear engineering S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 μm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 μm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 μm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system. Copyright © 2017 Institute of Advanced Engineering and Science. All rights reserved. Institute of Advanced Engineering and Science 2017-12 Article PeerReviewed text en http://ir.unimas.my/id/eprint/18929/2/S-Bend.pdf Nurdiani, Zamhari and Abang Annuar, Ehsan and Mohd Syuhaimi, Abd Rahman (2017) S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler. International Journal of Electrical and Computer Engineering, 7 (6). pp. 3299-3305. ISSN 2088-8708 http://iaesjournal.com/online/index.php/IJECE/article/view/13049 DOI: 10.11591/ijece.v7i6.pp3299-3305 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Nurdiani, Zamhari Abang Annuar, Ehsan Mohd Syuhaimi, Abd Rahman S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title | S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title_full | S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title_fullStr | S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title_full_unstemmed | S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title_short | S-bend silicon-on-insulator (SOI) large cross-section rib waveguide for directional coupler |
| title_sort | s-bend silicon-on-insulator (soi) large cross-section rib waveguide for directional coupler |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://ir.unimas.my/id/eprint/18929/ http://ir.unimas.my/id/eprint/18929/ http://ir.unimas.my/id/eprint/18929/ http://ir.unimas.my/id/eprint/18929/2/S-Bend.pdf |