Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

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Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured...

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Bibliographic Details
Main Authors:	Sahari, S.K., Abdul Halim, N.A., Muhammad, K., Sawawi, M., Hamzah, A.A., Yeop Majlis, B.
Format:	Article
Language:	English
Published:	IOP Publishing Ltd 2017
Subjects:	TP Chemical technology
Online Access:	http://ir.unimas.my/id/eprint/17014/ http://ir.unimas.my/id/eprint/17014/1/Sawawi.pdf

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