Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured...

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Main Authors: Sahari, S.K., Abdul Halim, N.A., Muhammad, K., Sawawi, M., Hamzah, A.A., Yeop Majlis, B.
Format: Article
Language:English
Published: IOP Publishing Ltd 2017
Subjects:
Online Access:http://ir.unimas.my/id/eprint/17014/
http://ir.unimas.my/id/eprint/17014/1/Sawawi.pdf
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author Sahari, S.K.
Abdul Halim, N.A.
Muhammad, K.
Sawawi, M.
Hamzah, A.A.
Yeop Majlis, B.
author_facet Sahari, S.K.
Abdul Halim, N.A.
Muhammad, K.
Sawawi, M.
Hamzah, A.A.
Yeop Majlis, B.
author_sort Sahari, S.K.
building UNIMAS Institutional Repository
collection Online Access
description The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.
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spelling unimas-170142021-06-08T10:48:18Z http://ir.unimas.my/id/eprint/17014/ Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience Sahari, S.K. Abdul Halim, N.A. Muhammad, K. Sawawi, M. Hamzah, A.A. Yeop Majlis, B. TP Chemical technology The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface. IOP Publishing Ltd 2017 Article PeerReviewed text en http://ir.unimas.my/id/eprint/17014/1/Sawawi.pdf Sahari, S.K. and Abdul Halim, N.A. and Muhammad, K. and Sawawi, M. and Hamzah, A.A. and Yeop Majlis, B. (2017) Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience. Materials Science and Engineering, 201. ISSN 0921-5093 http://iopscience.iop.org/1757-899X/201/1/012024 10.1088/1757-899X/201/1/012024
spellingShingle TP Chemical technology
Sahari, S.K.
Abdul Halim, N.A.
Muhammad, K.
Sawawi, M.
Hamzah, A.A.
Yeop Majlis, B.
Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title_full Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title_fullStr Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title_full_unstemmed Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title_short Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience
title_sort effect of substrate orientation on the growth of germanium oxide in dry oxygen ambience
topic TP Chemical technology
url http://ir.unimas.my/id/eprint/17014/
http://ir.unimas.my/id/eprint/17014/
http://ir.unimas.my/id/eprint/17014/
http://ir.unimas.my/id/eprint/17014/1/Sawawi.pdf