High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application
This paper presents the design a power amplifier (PA) for direct sequence ultra-wideband applications using 0.13 μm CMOS technology operating in a low band frequency of 3.1 GHz to 5.1 GHz. Current-reused technique is employed at the first stage to increase the gain at the upper end of the desired ba...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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UTEM
2017
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| Online Access: | http://ir.unimas.my/id/eprint/15392/ http://ir.unimas.my/id/eprint/15392/1/High%20Gain%20of%203.1-5.1%20GHz%20CMOS%20Power%20Amplifier%20for%20Direct%20Sequence%20Ultra-Wideband%20Application%20%28abstract%29.pdf |
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| author | Sapawi, R. Asyraf, A.N. Mohamad Hasnul, D.H.A. Sahari, S.K. Masra, S.M.W. Kipli, K. Julai, N. Junaidi, Nazreen Salleh, D.N.S.A Murad, S.A.Z. |
| author_facet | Sapawi, R. Asyraf, A.N. Mohamad Hasnul, D.H.A. Sahari, S.K. Masra, S.M.W. Kipli, K. Julai, N. Junaidi, Nazreen Salleh, D.N.S.A Murad, S.A.Z. |
| author_sort | Sapawi, R. |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | This paper presents the design a power amplifier (PA) for direct sequence ultra-wideband applications using 0.13 μm CMOS technology operating in a low band frequency of 3.1 GHz to 5.1 GHz. Current-reused technique is employed at the first stage to increase the gain at the upper end of the desired band. Cascaded common source configuration with shunt peaking inductor at the second stage helps to enhance the wideband frequency while increasing the gain approximately twice the performance. The simulation results specify that high gain of 20.3 dB with ± 0.8 dB flatness, group delay variation of ±121.3 ps, and good input return loss and output return loss is obtained over desired working band. The proposed PA achieves power consumption of 27.3 mW. |
| first_indexed | 2025-11-15T06:46:07Z |
| format | Article |
| id | unimas-15392 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T06:46:07Z |
| publishDate | 2017 |
| publisher | UTEM |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-153922017-02-21T06:14:34Z http://ir.unimas.my/id/eprint/15392/ High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application Sapawi, R. Asyraf, A.N. Mohamad Hasnul, D.H.A. Sahari, S.K. Masra, S.M.W. Kipli, K. Julai, N. Junaidi, Nazreen Salleh, D.N.S.A Murad, S.A.Z. TK Electrical engineering. Electronics Nuclear engineering This paper presents the design a power amplifier (PA) for direct sequence ultra-wideband applications using 0.13 μm CMOS technology operating in a low band frequency of 3.1 GHz to 5.1 GHz. Current-reused technique is employed at the first stage to increase the gain at the upper end of the desired band. Cascaded common source configuration with shunt peaking inductor at the second stage helps to enhance the wideband frequency while increasing the gain approximately twice the performance. The simulation results specify that high gain of 20.3 dB with ± 0.8 dB flatness, group delay variation of ±121.3 ps, and good input return loss and output return loss is obtained over desired working band. The proposed PA achieves power consumption of 27.3 mW. UTEM 2017 Article PeerReviewed text en http://ir.unimas.my/id/eprint/15392/1/High%20Gain%20of%203.1-5.1%20GHz%20CMOS%20Power%20Amplifier%20for%20Direct%20Sequence%20Ultra-Wideband%20Application%20%28abstract%29.pdf Sapawi, R. and Asyraf, A.N. and Mohamad Hasnul, D.H.A. and Sahari, S.K. and Masra, S.M.W. and Kipli, K. and Julai, N. and Junaidi, Nazreen and Salleh, D.N.S.A and Murad, S.A.Z. (2017) High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application. Journal of Telecommunication, Electronic and Computer Engineering, 8 (12). pp. 99-103. ISSN 2289-8131 http://journal.utem.edu.my/index.php/jtec/article/viewFile/1443/954 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Sapawi, R. Asyraf, A.N. Mohamad Hasnul, D.H.A. Sahari, S.K. Masra, S.M.W. Kipli, K. Julai, N. Junaidi, Nazreen Salleh, D.N.S.A Murad, S.A.Z. High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title | High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title_full | High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title_fullStr | High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title_full_unstemmed | High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title_short | High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application |
| title_sort | high gain of 3.1-5.1 ghz cmos power amplifier for direct sequence ultra-wideband application |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://ir.unimas.my/id/eprint/15392/ http://ir.unimas.my/id/eprint/15392/ http://ir.unimas.my/id/eprint/15392/1/High%20Gain%20of%203.1-5.1%20GHz%20CMOS%20Power%20Amplifier%20for%20Direct%20Sequence%20Ultra-Wideband%20Application%20%28abstract%29.pdf |