Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The va...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Elsevier GmbH
2017
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| Online Access: | http://ir.unimas.my/id/eprint/14954/ http://ir.unimas.my/id/eprint/14954/2/Large.pdf |
| _version_ | 1848837756607791104 |
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| author | Nurdiani, Zamhari Abang Annuar, Ehsan |
| author_facet | Nurdiani, Zamhari Abang Annuar, Ehsan |
| author_sort | Nurdiani, Zamhari |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement. |
| first_indexed | 2025-11-15T06:44:43Z |
| format | Article |
| id | unimas-14954 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T06:44:43Z |
| publishDate | 2017 |
| publisher | Elsevier GmbH |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-149542022-06-22T07:33:00Z http://ir.unimas.my/id/eprint/14954/ Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide Nurdiani, Zamhari Abang Annuar, Ehsan TA Engineering (General). Civil engineering (General) S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement. Elsevier GmbH 2017-02-01 Article PeerReviewed text en http://ir.unimas.my/id/eprint/14954/2/Large.pdf Nurdiani, Zamhari and Abang Annuar, Ehsan (2017) Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide. Optik, 130. pp. 1414-1420. ISSN 0030-4026 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006725466&doi=10.1016%2fj.ijleo.2016.11.161&partnerID=40&md5=895d0b9a424fbd271c45dd11d3716147 DOI: 10.1016/j.ijleo.2016.11.161 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Nurdiani, Zamhari Abang Annuar, Ehsan Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title | Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title_full | Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title_fullStr | Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title_full_unstemmed | Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title_short | Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide |
| title_sort | large cross-section rib silicon-on-insulator (soi) s-bend waveguide |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://ir.unimas.my/id/eprint/14954/ http://ir.unimas.my/id/eprint/14954/ http://ir.unimas.my/id/eprint/14954/ http://ir.unimas.my/id/eprint/14954/2/Large.pdf |