Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide

S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The va...

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Main Authors: Nurdiani, Zamhari, Abang Annuar, Ehsan
Format: Article
Language:English
Published: Elsevier GmbH 2017
Subjects:
Online Access:http://ir.unimas.my/id/eprint/14954/
http://ir.unimas.my/id/eprint/14954/2/Large.pdf
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author Nurdiani, Zamhari
Abang Annuar, Ehsan
author_facet Nurdiani, Zamhari
Abang Annuar, Ehsan
author_sort Nurdiani, Zamhari
building UNIMAS Institutional Repository
collection Online Access
description S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement.
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format Article
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institution Universiti Malaysia Sarawak
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spelling unimas-149542022-06-22T07:33:00Z http://ir.unimas.my/id/eprint/14954/ Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide Nurdiani, Zamhari Abang Annuar, Ehsan TA Engineering (General). Civil engineering (General) S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement. Elsevier GmbH 2017-02-01 Article PeerReviewed text en http://ir.unimas.my/id/eprint/14954/2/Large.pdf Nurdiani, Zamhari and Abang Annuar, Ehsan (2017) Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide. Optik, 130. pp. 1414-1420. ISSN 0030-4026 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006725466&doi=10.1016%2fj.ijleo.2016.11.161&partnerID=40&md5=895d0b9a424fbd271c45dd11d3716147 DOI: 10.1016/j.ijleo.2016.11.161
spellingShingle TA Engineering (General). Civil engineering (General)
Nurdiani, Zamhari
Abang Annuar, Ehsan
Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title_full Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title_fullStr Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title_full_unstemmed Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title_short Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
title_sort large cross-section rib silicon-on-insulator (soi) s-bend waveguide
topic TA Engineering (General). Civil engineering (General)
url http://ir.unimas.my/id/eprint/14954/
http://ir.unimas.my/id/eprint/14954/
http://ir.unimas.my/id/eprint/14954/
http://ir.unimas.my/id/eprint/14954/2/Large.pdf