Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

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Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isol...

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Bibliographic Details
Main Author:	Kho, Elizabeth Ching Tee
Format:	Thesis
Language:	English
Published:	Universiti Malaysia Sarawak (UNIMAS) 2014
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://ir.unimas.my/id/eprint/14281/ http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf

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