Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography
Release coating layer (RCL) becomes an important element in ultraviolet nanoimprint lithography (UVNIL) for preventing the adhesive resin from adhering to the surface of antireflection structures (ARS) mold. However, complete filling the resin of a high-aspect-ratio ARS mold during UV-NIL generates...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier Ltd
2015
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| Online Access: | http://umpir.ump.edu.my/id/eprint/8811/ http://umpir.ump.edu.my/id/eprint/8811/1/fkee-2015-Nurhafizah-Lifetime%20Amelioration-abs.pdf |
| _version_ | 1848818338439888896 |
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| author | Nurhafizah, Abu Talip Hayashi, Tatsuya Taniguchi, Jun Hiwasa, Shin |
| author_facet | Nurhafizah, Abu Talip Hayashi, Tatsuya Taniguchi, Jun Hiwasa, Shin |
| author_sort | Nurhafizah, Abu Talip |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | Release coating layer (RCL) becomes an important element in ultraviolet nanoimprint lithography (UVNIL) for preventing the adhesive resin from adhering to the surface of antireflection structures (ARS) mold. However, complete filling the resin of a high-aspect-ratio ARS mold during UV-NIL generates a strong release force (RF) that deteriorates the RCL and affects the lifetime of the ARS mold. In this paper, we proposed a technique of partial-filling UV-NIL in order to reduce the RF and consequently, ameliorate the lifetime of the ARS mold. The release and optical properties of the ARS were measured to determine
the lifetime of the mold, and complete-filling UV-NIL was also executed for comparison. By means of partial-filling
UV-NIL, we successfully fabricated ARS films with excellent performance up to the 150th imprint, i.e., reflectivity of 0.25 ± 0.15% and transmittance of 94.0 ± 0.50% at visible wavelengths, compared to complete-filling UV-NIL up to the 50th imprint. |
| first_indexed | 2025-11-15T01:36:05Z |
| format | Article |
| id | ump-8811 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T01:36:05Z |
| publishDate | 2015 |
| publisher | Elsevier Ltd |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-88112018-06-28T01:06:33Z http://umpir.ump.edu.my/id/eprint/8811/ Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography Nurhafizah, Abu Talip Hayashi, Tatsuya Taniguchi, Jun Hiwasa, Shin TK Electrical engineering. Electronics Nuclear engineering Release coating layer (RCL) becomes an important element in ultraviolet nanoimprint lithography (UVNIL) for preventing the adhesive resin from adhering to the surface of antireflection structures (ARS) mold. However, complete filling the resin of a high-aspect-ratio ARS mold during UV-NIL generates a strong release force (RF) that deteriorates the RCL and affects the lifetime of the ARS mold. In this paper, we proposed a technique of partial-filling UV-NIL in order to reduce the RF and consequently, ameliorate the lifetime of the ARS mold. The release and optical properties of the ARS were measured to determine the lifetime of the mold, and complete-filling UV-NIL was also executed for comparison. By means of partial-filling UV-NIL, we successfully fabricated ARS films with excellent performance up to the 150th imprint, i.e., reflectivity of 0.25 ± 0.15% and transmittance of 94.0 ± 0.50% at visible wavelengths, compared to complete-filling UV-NIL up to the 50th imprint. Elsevier Ltd 2015 Article PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/8811/1/fkee-2015-Nurhafizah-Lifetime%20Amelioration-abs.pdf Nurhafizah, Abu Talip and Hayashi, Tatsuya and Taniguchi, Jun and Hiwasa, Shin (2015) Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography. Microelectronic Engineering, 141. pp. 81-86. ISSN 0167-9317. (Published) http://dx.doi.org/10.1016/j.mee.2015.01.035 DOI: 10.1016/j.mee.2015.01.035 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Nurhafizah, Abu Talip Hayashi, Tatsuya Taniguchi, Jun Hiwasa, Shin Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title | Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title_full | Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title_fullStr | Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title_full_unstemmed | Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title_short | Lifetime Amelioration of Antireflection Structure Molds by Means of Partial-filling Ultraviolet Nanoimprint Lithography |
| title_sort | lifetime amelioration of antireflection structure molds by means of partial-filling ultraviolet nanoimprint lithography |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/8811/ http://umpir.ump.edu.my/id/eprint/8811/ http://umpir.ump.edu.my/id/eprint/8811/ http://umpir.ump.edu.my/id/eprint/8811/1/fkee-2015-Nurhafizah-Lifetime%20Amelioration-abs.pdf |