Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir pro...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Teknologi Malaysia
2015
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf |
| _version_ | 1848818332628680704 |
|---|---|
| author | Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria |
| author_facet | Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria |
| author_sort | Ahmad Faizal, Mohd Zain |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm.The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to - 60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate |
| first_indexed | 2025-11-15T01:35:59Z |
| format | Article |
| id | ump-8790 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T01:35:59Z |
| publishDate | 2015 |
| publisher | Penerbit Universiti Teknologi Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-87902016-04-20T01:22:24Z http://umpir.ump.edu.my/id/eprint/8790/ Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria TS Manufactures Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm.The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to - 60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate Penerbit Universiti Teknologi Malaysia 2015 Article PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf Ahmad Faizal, Mohd Zain and Jia, Wei Low and Nafarizal, Nayan and Mohd Zainizan, Sahdan and Mohd Khairul, Ahmad and Ali Yeon, Md Shakaff and Ammar, Zakaria (2015) Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication. Jurnal Teknologi (Sciences and Engineering), 73 (1). pp. 11-15. ISSN 0127-9696 (print); 2180-3722 (online). (Published) http://www.jurnalteknologi.utm.my/index.php/jurnalteknologi/article/view/2984 DOI: 10.11113/jt.v73.2984 |
| spellingShingle | TS Manufactures Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title | Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title_full | Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title_fullStr | Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title_full_unstemmed | Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title_short | Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication |
| title_sort | spectroscopic studies of magnetron sputtering plasma discharge in cu/o2/ar mixture for copper oxide thin film fabrication |
| topic | TS Manufactures |
| url | http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf |