SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer
Here, numerical study of solid-state dye-sensitized solar cell (SSDSSC) with Copper (I) Iodide as a hole transport layer was investigated using SCAPS-1D simulation software. The complete simulated device structures in this project are composed of FTO/TiO2/N719/CuI/Ni. Several key parameters of HTL s...
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| Format: | Article |
| Language: | English |
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Chulalongkorn University, Faculty of Fine and Applied Arts
2022
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| Online Access: | https://umpir.ump.edu.my/id/eprint/45347/ |
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| author | Nur Syamimi, Noorasid Faiz, Arith Ain Yasmin, Firhat Ahmad Nizamuddin, Mustafa Ahmad Syahiman, Mohd Shah |
| author_facet | Nur Syamimi, Noorasid Faiz, Arith Ain Yasmin, Firhat Ahmad Nizamuddin, Mustafa Ahmad Syahiman, Mohd Shah |
| author_sort | Nur Syamimi, Noorasid |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | Here, numerical study of solid-state dye-sensitized solar cell (SSDSSC) with Copper (I) Iodide as a hole transport layer was investigated using SCAPS-1D simulation software. The complete simulated device structures in this project are composed of FTO/TiO2/N719/CuI/Ni. Several key parameters of HTL such as layer thickness, doping concentration, working temperature, and interface defect have been analysed to obtain the highest efficiency for SSDSSC as well as the influence of back contact. The incorporation with various ETLs such as TiO2, ZnO, and SnO2 were also studied. The results show that SSDSSC with back contact yields a better performance due to low HTL thickness compared to without back contact. In addition, it can also be proved that TiO2 as ETL obtained the best efficiency up to 5.6%. Further investigation also found that combining optimized CuI and TiO2 parameters with a perovskite layer would increase cell efficiency to nearly 30%, higher than previously reported devices. The proposed parameter structure may trigger the temptation for the use of CuI as HTL in solar cell application. |
| first_indexed | 2025-11-15T03:59:57Z |
| format | Article |
| id | ump-45347 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T03:59:57Z |
| publishDate | 2022 |
| publisher | Chulalongkorn University, Faculty of Fine and Applied Arts |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-453472025-08-11T08:02:19Z https://umpir.ump.edu.my/id/eprint/45347/ SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer Nur Syamimi, Noorasid Faiz, Arith Ain Yasmin, Firhat Ahmad Nizamuddin, Mustafa Ahmad Syahiman, Mohd Shah TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology Here, numerical study of solid-state dye-sensitized solar cell (SSDSSC) with Copper (I) Iodide as a hole transport layer was investigated using SCAPS-1D simulation software. The complete simulated device structures in this project are composed of FTO/TiO2/N719/CuI/Ni. Several key parameters of HTL such as layer thickness, doping concentration, working temperature, and interface defect have been analysed to obtain the highest efficiency for SSDSSC as well as the influence of back contact. The incorporation with various ETLs such as TiO2, ZnO, and SnO2 were also studied. The results show that SSDSSC with back contact yields a better performance due to low HTL thickness compared to without back contact. In addition, it can also be proved that TiO2 as ETL obtained the best efficiency up to 5.6%. Further investigation also found that combining optimized CuI and TiO2 parameters with a perovskite layer would increase cell efficiency to nearly 30%, higher than previously reported devices. The proposed parameter structure may trigger the temptation for the use of CuI as HTL in solar cell application. Chulalongkorn University, Faculty of Fine and Applied Arts 2022-02 Article PeerReviewed pdf en cc_by_nc_nd_4 https://umpir.ump.edu.my/id/eprint/45347/1/SCAPS%20numerical%20analysis%20of%20solid-state%20dye-sensitized%20.pdf Nur Syamimi, Noorasid and Faiz, Arith and Ain Yasmin, Firhat and Ahmad Nizamuddin, Mustafa and Ahmad Syahiman, Mohd Shah (2022) SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer. Engineering Journal, 26 (2). pp. 1-10. ISSN 0125-8281. (Published) https://doi.org/10.4186/ej.2022.26.2.1 https://doi.org/10.4186/ej.2022.26.2.1 https://doi.org/10.4186/ej.2022.26.2.1 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology Nur Syamimi, Noorasid Faiz, Arith Ain Yasmin, Firhat Ahmad Nizamuddin, Mustafa Ahmad Syahiman, Mohd Shah SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title | SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title_full | SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title_fullStr | SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title_full_unstemmed | SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title_short | SCAPS numerical analysis of solid-state dye-sensitized solar cell utilizing copper (I) iodide as hole transport layer |
| title_sort | scaps numerical analysis of solid-state dye-sensitized solar cell utilizing copper (i) iodide as hole transport layer |
| topic | TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology |
| url | https://umpir.ump.edu.my/id/eprint/45347/ https://umpir.ump.edu.my/id/eprint/45347/ https://umpir.ump.edu.my/id/eprint/45347/ |