Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism
Zinc oxide (ZnO) nanorods (NRs) doped with lanthanum (La) were synthesized via a low-temperature 90 °C hydrothermal method to investigate defect passivation and charge transport enhancement. Structural and spectroscopic characterization reveals that La3+ preferentially adsorbs at ZnO surfaces and gr...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Chemical Society
2025
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| Online Access: | http://umpir.ump.edu.my/id/eprint/45119/ http://umpir.ump.edu.my/id/eprint/45119/1/Compressive%20strain%20of%20la%20induced%20in%20ZnO%20nanorods%20by%20interstitial%20site.pdf |
| _version_ | 1848827256048189440 |
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| author | Nurul Aliyah, Zainal Abidin Faiz, Arith Ahmad Syahiman, Mohd Shah Sami, Ramadan Ahmad Nizamuddin, Muhammad Mustafa Nur Ezyanie, Safie Mohd Asyadi, Azam Marzaini, Rashid Chelvanathan, Puvaneswaran |
| author_facet | Nurul Aliyah, Zainal Abidin Faiz, Arith Ahmad Syahiman, Mohd Shah Sami, Ramadan Ahmad Nizamuddin, Muhammad Mustafa Nur Ezyanie, Safie Mohd Asyadi, Azam Marzaini, Rashid Chelvanathan, Puvaneswaran |
| author_sort | Nurul Aliyah, Zainal Abidin |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | Zinc oxide (ZnO) nanorods (NRs) doped with lanthanum (La) were synthesized via a low-temperature 90 °C hydrothermal method to investigate defect passivation and charge transport enhancement. Structural and spectroscopic characterization reveals that La3+ preferentially adsorbs at ZnO surfaces and grain boundaries, inducing compressive strain that suppresses defect formation without lattice substitution. Morphological studies demonstrate improved surface uniformity in La-doped NRs, while Raman spectroscopy shows reduced defect-related modes at 1 mol % La doping. XPS analysis confirms interfacial La3+ localization through characteristic 3.5 eV satellite features and minimal binding energy shifts of merely 0.2 eV. The optimal 1 mol % La-doped ZnO exhibits a conductivity of 5.46 S/m at 3.25 eV bandgap with a 4.6% improvement over high-temperature (>300 °C) synthesized La-ZnO references. While pristine ZnO shows higher absolute conductivity, these results demonstrate that low-temperature hydrothermal processing can achieve comparable electronic property enhancement to conventional high-temperature methods. This work provides fundamental insights into interfacial doping strategies for ZnO-based materials, with potential implications for optoelectronic applications. |
| first_indexed | 2025-11-15T03:57:49Z |
| format | Article |
| id | ump-45119 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T03:57:49Z |
| publishDate | 2025 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-451192025-07-18T07:50:03Z http://umpir.ump.edu.my/id/eprint/45119/ Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism Nurul Aliyah, Zainal Abidin Faiz, Arith Ahmad Syahiman, Mohd Shah Sami, Ramadan Ahmad Nizamuddin, Muhammad Mustafa Nur Ezyanie, Safie Mohd Asyadi, Azam Marzaini, Rashid Chelvanathan, Puvaneswaran QC Physics TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering Zinc oxide (ZnO) nanorods (NRs) doped with lanthanum (La) were synthesized via a low-temperature 90 °C hydrothermal method to investigate defect passivation and charge transport enhancement. Structural and spectroscopic characterization reveals that La3+ preferentially adsorbs at ZnO surfaces and grain boundaries, inducing compressive strain that suppresses defect formation without lattice substitution. Morphological studies demonstrate improved surface uniformity in La-doped NRs, while Raman spectroscopy shows reduced defect-related modes at 1 mol % La doping. XPS analysis confirms interfacial La3+ localization through characteristic 3.5 eV satellite features and minimal binding energy shifts of merely 0.2 eV. The optimal 1 mol % La-doped ZnO exhibits a conductivity of 5.46 S/m at 3.25 eV bandgap with a 4.6% improvement over high-temperature (>300 °C) synthesized La-ZnO references. While pristine ZnO shows higher absolute conductivity, these results demonstrate that low-temperature hydrothermal processing can achieve comparable electronic property enhancement to conventional high-temperature methods. This work provides fundamental insights into interfacial doping strategies for ZnO-based materials, with potential implications for optoelectronic applications. American Chemical Society 2025 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/45119/1/Compressive%20strain%20of%20la%20induced%20in%20ZnO%20nanorods%20by%20interstitial%20site.pdf Nurul Aliyah, Zainal Abidin and Faiz, Arith and Ahmad Syahiman, Mohd Shah and Sami, Ramadan and Ahmad Nizamuddin, Muhammad Mustafa and Nur Ezyanie, Safie and Mohd Asyadi, Azam and Marzaini, Rashid and Chelvanathan, Puvaneswaran (2025) Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism. Crystal Growth and Design, 25 (12). pp. 4126-4139. ISSN 1528-7483. (Published) https://doi.org/10.1021/acs.cgd.4c01359 https://doi.org/10.1021/acs.cgd.4c01359 |
| spellingShingle | QC Physics TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering Nurul Aliyah, Zainal Abidin Faiz, Arith Ahmad Syahiman, Mohd Shah Sami, Ramadan Ahmad Nizamuddin, Muhammad Mustafa Nur Ezyanie, Safie Mohd Asyadi, Azam Marzaini, Rashid Chelvanathan, Puvaneswaran Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title | Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title_full | Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title_fullStr | Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title_full_unstemmed | Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title_short | Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| title_sort | compressive strain of la induced in zno nanorods by interstitial site passivation for enhanced charge carrier transport mechanism |
| topic | QC Physics TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/45119/ http://umpir.ump.edu.my/id/eprint/45119/ http://umpir.ump.edu.my/id/eprint/45119/ http://umpir.ump.edu.my/id/eprint/45119/1/Compressive%20strain%20of%20la%20induced%20in%20ZnO%20nanorods%20by%20interstitial%20site.pdf |