Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

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Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

Amongst various sensing and monitoring technologies, sensors based on field effect transistors (FETs) have attracted considerable attention from both the industry and academia. Owing to their unique characteristics such as their small size, lightweight, low cost, flexibility, fast response, stabilit...

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Bibliographic Details
Main Author:	Hani Taha, Abd Assamad Al Ariqi
Format:	Thesis
Language:	English
Published:	2020
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/34351/ http://umpir.ump.edu.my/id/eprint/34351/1/Electrical%20and%20temperature%20characterisation.pdf

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