The impact of channel fin width on electrical characteristics of Si-FinFET

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The impact of channel fin width on electrical characteristics of Si-FinFET

This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...

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Bibliographic Details
Main Authors:	Atalla, Y., Hashim, Y., Abdul Nasir, Abd Ghafar
Format:	Article
Language:	English
Published:	Institute of Advanced Engineering and Science 2022
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/33072/ http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf

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