Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics

Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, w...

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Main Authors: Mohammad Shahnawaze, Ansari, Mohd Hafiz Dzarfan, Othman, Mohammad Omaish, Ansari, Sana, Ansari, Norazlianie, Sazali
Format: Article
Language:English
Published: Elsevier 2021
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/30642/
http://umpir.ump.edu.my/id/eprint/30642/1/Large%20spin-dependent%20tunneling%20magnetoresistance1.pdf
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author Mohammad Shahnawaze, Ansari
Mohd Hafiz Dzarfan, Othman
Mohammad Omaish, Ansari
Sana, Ansari
Norazlianie, Sazali
author_facet Mohammad Shahnawaze, Ansari
Mohd Hafiz Dzarfan, Othman
Mohammad Omaish, Ansari
Sana, Ansari
Norazlianie, Sazali
author_sort Mohammad Shahnawaze, Ansari
building UMP Institutional Repository
collection Online Access
description Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, with a Verwey transition temperature (Tv) of ~122 K and a saturation magnetization (Ms) ~ 361 emu/cm3. Furthermore, the antiferromagnetic (AFM)-coupled antiphase boundaries (APBs) controlled the transport properties of the Fe3O4 thin films, due to the tunneling of spin-polarized electrons through the films. Very-high magnetoresistance (MR) value (−8.9%) were observed for HFilm plane, constructed from Fe3O4 (200-nm thick)/PET when H values were below 60 kOe at 300 K. In addition, flexibility tests, to examine resistivity, M-H and MR, were performed using with 90° and 45° bent angles and cyclability experiments were implemented to validate the reproducibility of these characteristics. These outcomes demonstrated that Fe3O4/PET heterostructures may represent a promising candidate for flexible/wearable spintronics.
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institution Universiti Malaysia Pahang
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publishDate 2021
publisher Elsevier
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spelling ump-306422021-02-05T04:14:38Z http://umpir.ump.edu.my/id/eprint/30642/ Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics Mohammad Shahnawaze, Ansari Mohd Hafiz Dzarfan, Othman Mohammad Omaish, Ansari Sana, Ansari Norazlianie, Sazali TS Manufactures Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, with a Verwey transition temperature (Tv) of ~122 K and a saturation magnetization (Ms) ~ 361 emu/cm3. Furthermore, the antiferromagnetic (AFM)-coupled antiphase boundaries (APBs) controlled the transport properties of the Fe3O4 thin films, due to the tunneling of spin-polarized electrons through the films. Very-high magnetoresistance (MR) value (−8.9%) were observed for HFilm plane, constructed from Fe3O4 (200-nm thick)/PET when H values were below 60 kOe at 300 K. In addition, flexibility tests, to examine resistivity, M-H and MR, were performed using with 90° and 45° bent angles and cyclability experiments were implemented to validate the reproducibility of these characteristics. These outcomes demonstrated that Fe3O4/PET heterostructures may represent a promising candidate for flexible/wearable spintronics. Elsevier 2021 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/30642/1/Large%20spin-dependent%20tunneling%20magnetoresistance1.pdf Mohammad Shahnawaze, Ansari and Mohd Hafiz Dzarfan, Othman and Mohammad Omaish, Ansari and Sana, Ansari and Norazlianie, Sazali (2021) Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics. Materials Science & Engineering: B, 265 (115033). pp. 1-10. ISSN 0921-5107. (Published) https://doi.org/10.1016/j.mseb.2020.115033 https://doi.org/10.1016/j.mseb.2020.115033
spellingShingle TS Manufactures
Mohammad Shahnawaze, Ansari
Mohd Hafiz Dzarfan, Othman
Mohammad Omaish, Ansari
Sana, Ansari
Norazlianie, Sazali
Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_full Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_fullStr Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_full_unstemmed Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_short Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_sort large spin-dependent tunneling magnetoresistance in fe3o4/pet heterostructures developed at room temperature: a promising candidate for flexible and wearable spintronics
topic TS Manufactures
url http://umpir.ump.edu.my/id/eprint/30642/
http://umpir.ump.edu.my/id/eprint/30642/
http://umpir.ump.edu.my/id/eprint/30642/
http://umpir.ump.edu.my/id/eprint/30642/1/Large%20spin-dependent%20tunneling%20magnetoresistance1.pdf