Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET

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Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET

This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from -5...

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Bibliographic Details
Main Authors:	Agha, Firas Natheer Abdul-kadir, Hashim, Yasir, Shakib, Mohammed Nazmus
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE Xplore 2020
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/30155/ http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf

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