A new factor for fabrication technologies evaluation for silicon nanowire transistors.

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison...

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Main Authors: yasir, Hashim, Mohammed Nazmus, Shakib
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2020
Subjects:
Online Access:https://umpir.ump.edu.my/id/eprint/29227/
http://doi.org/10.12928/telkomnika.v18i5.12121
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author yasir, Hashim
Mohammed Nazmus, Shakib
author_facet yasir, Hashim
Mohammed Nazmus, Shakib
author_sort yasir, Hashim
building UMP Institutional Repository
collection Online Access
description This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.
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institution Universiti Malaysia Pahang
institution_category Local University
language English
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publisher Universitas Ahmad Dahlan
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spelling ump-292272025-09-25T06:55:58Z https://umpir.ump.edu.my/id/eprint/29227/ A new factor for fabrication technologies evaluation for silicon nanowire transistors. yasir, Hashim Mohammed Nazmus, Shakib TK Electrical engineering. Electronics Nuclear engineering This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography. Universitas Ahmad Dahlan 2020 Article PeerReviewed pdf en cc_by_nc_sa_4 https://umpir.ump.edu.my/id/eprint/29227/1/3.1%20A%20new%20factor%20for%20fabrication%20technologies%20evaluation.pdf yasir, Hashim and Mohammed Nazmus, Shakib (2020) A new factor for fabrication technologies evaluation for silicon nanowire transistors. TELKOMNIKA (Telecommunication Computing Electronics and Control), 18 (5). pp. 2597-2605. ISSN 1693-6930. (Published) http://doi.org/10.12928/telkomnika.v18i5.12121 http://doi.org/10.12928/telkomnika.v18i5.12121 http://doi.org/10.12928/telkomnika.v18i5.12121
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
yasir, Hashim
Mohammed Nazmus, Shakib
A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title_full A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title_fullStr A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title_full_unstemmed A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title_short A new factor for fabrication technologies evaluation for silicon nanowire transistors.
title_sort new factor for fabrication technologies evaluation for silicon nanowire transistors.
topic TK Electrical engineering. Electronics Nuclear engineering
url https://umpir.ump.edu.my/id/eprint/29227/
https://umpir.ump.edu.my/id/eprint/29227/
https://umpir.ump.edu.my/id/eprint/29227/
http://doi.org/10.12928/telkomnika.v18i5.12121