A temperature characterization of (Si-FinFET) based on channel oxide thickness

QR Code

A temperature characterization of (Si-FinFET) based on channel oxide thickness

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimi...

Full description

Bibliographic Details
Main Authors:	Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar, Jabbar, Waheb A.
Format:	Article
Language:	English
Published:	Universitas Ahmad Dahlan 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf

Similar Items

Temperature characteristics of FinFET based on channel fin width and working voltage
by: Atalla, Yousif, et al.
Published: (2020)

The impact of channel fin width on electrical characteristics of Si-FinFET
by: Atalla, Yousif, et al.
Published: (2022)

Optimal channel dimensions and temperature characteristics of SI-FinFET transistor
by: Yousif, Yousif Atalla
Published: (2019)

Temperature sensitivity based on channel length of FinFET transistor
by: Atalla, Yousif, et al.
Published: (2018)

The impact of channel fin width on electrical characteristics of Si-FinFET
by: Atalla, Y., et al.
Published: (2022)

Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
by: Mahmood, Ahmed, et al.
Published: (2019)

Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
by: Mahmood, Ahmed, et al.
Published: (2019)

Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
by: Mahmood, Ahmed, et al.
Published: (2018)

Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
by: Mahmood, Ahmed, et al.
Published: (2019)

Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
by: Hashim, Yasir
Published: (2017)

Temperature Effect on ON/OFF Current Ratio of FinFET Transistor
by: Hashim, Yasir
Published: (2017)

Optimal nano dimensional channel of GaAs-FinFET transistor
by: Ahmed, Mahmood, et al.
Published: (2018)

Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
by: Mahmood, Ahmed, et al.
Published: (2018)

Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET)
by: Tan, Pei Xin
Published: (2023)

Design of optimal nanoscale channel dimensions of FinFET based on constituent semiconductor materials
by: Ali, Ahmed Mahmood
Published: (2019)

Temperature characteristics of Gate all around nanowire channel Si-TFET
by: Agha, Firas Natheer Abdul-kadir, et al.
Published: (2021)

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
by: AlAriqi, Hani Taha, et al.
Published: (2020)

Temperature characteristics of silicon nanowire transistor depending on oxide thickness
by: AlAriqi, Hani Taha, et al.
Published: (2019)

Optimization of n-MOS 6T nanowire SRAM bit cell based on nanowires ratio of SiNWTs
by: Hashim, Yasir, et al.
Published: (2020)

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
by: Waheb, A.Jabbara, et al.
Published: (2022)

Fet curve tracer
by: Gan, Gabriel Kok Wai
Published: (2011)

Active And Passive Fet Mixer
by: Mustapa, Muzalifah
Published: (2005)

Temperature sensitivity of silicon nanowire transistor based on channel length
by: AlAriqi, Hani Taha, et al.
Published: (2019)

An improved model for predicting performance of finned tube heat exchanger under frosting condition, with frost thickness variation along fin
by: TSO, C, et al.
Published: (2006)

Optimization of Channel Length Nano-Scale SiNWT Based SRAM Cell
by: Naif, Yasir Hashim
Published: (2016)

Designing A Self Oscillating Fet Mixer (SOM)
by: Patrick Lee, Voon Boke
Published: (2006)

Design and Development of Novel Fin Micro Channel Heat Sink for High Heat Flux Application
by: Nor Haziq, Naqiuddin Hamli
Published: (2019)

Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
by: Jeong, Hyun Moon, et al.
Published: (2007)

H∞Filter with fuzzy logic estimation : An analysis to refrain Finite Escape Time (FET)
by: Bakiss Hiyana, Abu Bakar, et al.
Published: (2022)

Drift Compensation for pH IsFET Sensor Using NARX Neural Networks
by: Mohammad Iqwhanus Syaffa, Amir, et al.
Published: (2018)

Device characterization based on stressor, geometric and process design considerations of fet technology / Nurul Aida Farhana Othman
by: Nurul Aida Farhana, Othman
Published: (2018)

Performance analysis of image transmission with various channel conditions/modulation techniques
by: Mohsin, Marwa Jaleel, et al.
Published: (2020)

Effect Of Perforation Area On Temperature Distribution Of The Rectangular Fins Under Natural Convection
by: Ibrahim, Thamir K., et al.
Published: (2016)

LoRaWAN-based hybrid internet of wearable things system implementation for smart healthcare
by: Abdulmalek, Suliman, et al.
Published: (2024)

Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.
by: Jo, Lene Tan, et al.
Published: (2007)

Effects Of Fin Length And Fin Valley On The Performance Of Bus Duct Conductor
by: Hooi, Khey Herng
Published: (2022)

Novel compact fin and tube heat exchanger made of reinforced composite plate fins
by: Mohammed Hamood Hezam, Alshameri, et al.
Published: (2021)

Characterization of silicon nanowire transistor
by: Al Ariqi, Hani Taha, et al.
Published: (2019)

Influence of fins designs, geometries and conditions on the performance of a plate-fin heat exchanger-experimental perspective
by: M.I.N, Ma'arof, et al.
Published: (2019)

Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
by: Yazeer, Mohamed Jameel, et al.
Published: (2016)