Optimal nano dimensional channel of GaAs-FinFET transistor

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Optimal nano dimensional channel of GaAs-FinFET transistor

This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...

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Bibliographic Details
Main Authors:	Ahmed, Mahmood, Waheb Abdul Jabbar, Shaif Abdullah, Wasan Kadhim, Saad, Hadi, Manap
Format:	Conference or Workshop Item
Language:	English English
Published:	IEEE 2018
Subjects:	QA75 Electronic computers. Computer science T Technology (General)
Online Access:	http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf

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