Optimal nano dimensional channel of GaAs-FinFET transistor
This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2018
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| Online Access: | http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf |
| _version_ | 1848822257353228288 |
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| author | Ahmed, Mahmood Waheb Abdul Jabbar, Shaif Abdullah Wasan Kadhim, Saad Hadi, Manap |
| author_facet | Ahmed, Mahmood Waheb Abdul Jabbar, Shaif Abdullah Wasan Kadhim, Saad Hadi, Manap |
| author_sort | Ahmed, Mahmood |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm. |
| first_indexed | 2025-11-15T02:38:22Z |
| format | Conference or Workshop Item |
| id | ump-25345 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T02:38:22Z |
| publishDate | 2018 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-253452019-11-12T03:01:16Z http://umpir.ump.edu.my/id/eprint/25345/ Optimal nano dimensional channel of GaAs-FinFET transistor Ahmed, Mahmood Waheb Abdul Jabbar, Shaif Abdullah Wasan Kadhim, Saad Hadi, Manap QA75 Electronic computers. Computer science T Technology (General) This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm. IEEE 2018 Conference or Workshop Item PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf pdf en http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf Ahmed, Mahmood and Waheb Abdul Jabbar, Shaif Abdullah and Wasan Kadhim, Saad and Hadi, Manap (2018) Optimal nano dimensional channel of GaAs-FinFET transistor. In: 2018 IEEE 16th Student Conference On Research And Development (Scored), Bangi, Malaysia (26-28 Nov 2018) , 26 - 28 Nov 2018 , Bangi Resort, Bangi, Selangor, Malaysia. pp. 1-5.. ISBN 978-153869175-5 (Published) https://doi.org/10.1109/SCORED.2018.8710811 |
| spellingShingle | QA75 Electronic computers. Computer science T Technology (General) Ahmed, Mahmood Waheb Abdul Jabbar, Shaif Abdullah Wasan Kadhim, Saad Hadi, Manap Optimal nano dimensional channel of GaAs-FinFET transistor |
| title | Optimal nano dimensional channel of GaAs-FinFET transistor |
| title_full | Optimal nano dimensional channel of GaAs-FinFET transistor |
| title_fullStr | Optimal nano dimensional channel of GaAs-FinFET transistor |
| title_full_unstemmed | Optimal nano dimensional channel of GaAs-FinFET transistor |
| title_short | Optimal nano dimensional channel of GaAs-FinFET transistor |
| title_sort | optimal nano dimensional channel of gaas-finfet transistor |
| topic | QA75 Electronic computers. Computer science T Technology (General) |
| url | http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf |