Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions

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Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functiona...

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Bibliographic Details
Main Authors:	Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Sumy State University 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TS Manufactures
Online Access:	http://umpir.ump.edu.my/id/eprint/24742/ http://umpir.ump.edu.my/id/eprint/24742/1/Electrical%20%D0%A1haracterization%20of%20Ge-FinFET%20Transistor.pdf

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