Temperature sensitivity of silicon nanowire transistor based on channel length
This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/24710/ http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf |
| _version_ | 1848822102070657024 |
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| author | AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_facet | AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap |
| author_sort | AlAriqi, Hani Taha |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different length of the Nano wire gate (Lg = 25, 45, 65, 85 and 105 nm), were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The final results show that the best temperature sensitivity of SiNWT based in largest ΔI occurred at working voltage VDD range 1 V to 3.5 V, depends on channel length range 25 nm to 85 nm and beyond the temperature sensitivity will be constant even the channel length increased up to 105 nm. |
| first_indexed | 2025-11-15T02:35:54Z |
| format | Conference or Workshop Item |
| id | ump-24710 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T02:35:54Z |
| publishDate | 2019 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-247102019-12-03T01:50:57Z http://umpir.ump.edu.my/id/eprint/24710/ Temperature sensitivity of silicon nanowire transistor based on channel length AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap T Technology (General) This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different length of the Nano wire gate (Lg = 25, 45, 65, 85 and 105 nm), were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The final results show that the best temperature sensitivity of SiNWT based in largest ΔI occurred at working voltage VDD range 1 V to 3.5 V, depends on channel length range 25 nm to 85 nm and beyond the temperature sensitivity will be constant even the channel length increased up to 105 nm. IEEE 2019-01 Conference or Workshop Item PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf AlAriqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Temperature sensitivity of silicon nanowire transistor based on channel length. In: IEEE 8th International Conference On Modeling Simulation And Applied Optimization (ICMSAO 2019) , 15-17 April 2019 , University of Bahrain, Bahrain. pp. 1-4.. ISBN 978-1-5386-7684-4 (Published) https://doi.org/10.1109/ICMSAO.2019.8880360 |
| spellingShingle | T Technology (General) AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Temperature sensitivity of silicon nanowire transistor based on channel length |
| title | Temperature sensitivity of silicon nanowire transistor based on channel length |
| title_full | Temperature sensitivity of silicon nanowire transistor based on channel length |
| title_fullStr | Temperature sensitivity of silicon nanowire transistor based on channel length |
| title_full_unstemmed | Temperature sensitivity of silicon nanowire transistor based on channel length |
| title_short | Temperature sensitivity of silicon nanowire transistor based on channel length |
| title_sort | temperature sensitivity of silicon nanowire transistor based on channel length |
| topic | T Technology (General) |
| url | http://umpir.ump.edu.my/id/eprint/24710/ http://umpir.ump.edu.my/id/eprint/24710/ http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf |