Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

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Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality...

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Bibliographic Details
Main Authors:	Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Sumy State University (Sumy, Ukraine) 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf

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