Modelling and switching simulation of gate turn-off thyristor using finite element method

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Modelling and switching simulation of gate turn-off thyristor using finite element method

The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...

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Bibliographic Details
Main Author:	Norainon, Mohamed
Format:	Thesis
Language:	English
Published:	2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/2187/ http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF

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