Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)

Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)

This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investi...

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Bibliographic Details
Main Authors: Mahmood, Ahmed, Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: JACS 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf

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