Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investi...
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| Format: | Article |
| Language: | English |
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JACS
2018
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| Online Access: | http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf |
| _version_ | 1848821395283247104 |
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| author | Mahmood, Ahmed Hashim, Yasir Hadi, Manap |
| author_facet | Mahmood, Ahmed Hashim, Yasir Hadi, Manap |
| author_sort | Mahmood, Ahmed |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si FinFET. The current voltage characteristics has been simulating with different dimensions channel (length, width and oxide thickness). The best channel dimensions of Si-FinFET observed based on electrical characteristics at the working voltage VDD range of 0-5 V. Note that the results with the scaling channel dimensions. Depending on ION/IOFF ratio higher value, and nearest SS to the ideal SS, the best scaling channel dimensions (K) will be K=0.25 at VDD=5 V and K=0.25 at VDD=0.5 V. |
| first_indexed | 2025-11-15T02:24:40Z |
| format | Article |
| id | ump-21632 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T02:24:40Z |
| publishDate | 2018 |
| publisher | JACS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-216322018-09-14T07:10:53Z http://umpir.ump.edu.my/id/eprint/21632/ Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) Mahmood, Ahmed Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si FinFET. The current voltage characteristics has been simulating with different dimensions channel (length, width and oxide thickness). The best channel dimensions of Si-FinFET observed based on electrical characteristics at the working voltage VDD range of 0-5 V. Note that the results with the scaling channel dimensions. Depending on ION/IOFF ratio higher value, and nearest SS to the ideal SS, the best scaling channel dimensions (K) will be K=0.25 at VDD=5 V and K=0.25 at VDD=0.5 V. JACS 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf Mahmood, Ahmed and Hashim, Yasir and Hadi, Manap (2018) Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS). Journal of Nanoscience and Technology, 4 (4). pp. 431-434. ISSN 2455-0191. (Published) https://doi.org/10.30799/jnst.132.18040408 10.30799/jnst.132.18040408 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Mahmood, Ahmed Hashim, Yasir Hadi, Manap Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title | Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title_full | Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title_fullStr | Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title_full_unstemmed | Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title_short | Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) |
| title_sort | nano-dimensional properties of si-finfet transistor based on ion/ioff ratio and subthreshold swing (ss) |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf |