Temperature sensitivity based on channel length of FinFET transistor

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Temperature sensitivity based on channel length of FinFET transistor

This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteri...

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Bibliographic Details
Main Authors:	Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar
Format:	Article
Language:	English
Published:	JACS 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf

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