Temperature sensitivity based on channel length of FinFET transistor
This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteri...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
JACS
2018
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| Online Access: | http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf |
| _version_ | 1848821337083084800 |
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| author | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar |
| author_facet | Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar |
| author_sort | Atalla, Yousif |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate lengths (Lg = 25, 45, 65, 85 and 105 nm) are initially simulated, then the metal oxide semiconductor diode mode connection to measure FinFET temperature sensitivity is considered. The best temperature sensitivity of the FinFET is observed on the basis of the largest ∆I at the working voltage VDD range of 0–5 V. Furthermore, temperature sensitivity of the FinFET increased linearly with channel length at the range of 25–105 nm. |
| first_indexed | 2025-11-15T02:23:44Z |
| format | Article |
| id | ump-21391 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T02:23:44Z |
| publishDate | 2018 |
| publisher | JACS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-213912018-09-07T03:54:51Z http://umpir.ump.edu.my/id/eprint/21391/ Temperature sensitivity based on channel length of FinFET transistor Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar TK Electrical engineering. Electronics Nuclear engineering This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate lengths (Lg = 25, 45, 65, 85 and 105 nm) are initially simulated, then the metal oxide semiconductor diode mode connection to measure FinFET temperature sensitivity is considered. The best temperature sensitivity of the FinFET is observed on the basis of the largest ∆I at the working voltage VDD range of 0–5 V. Furthermore, temperature sensitivity of the FinFET increased linearly with channel length at the range of 25–105 nm. JACS 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf Atalla, Yousif and Hashim, Yasir and Abdul Nasir, Abd Ghafar (2018) Temperature sensitivity based on channel length of FinFET transistor. Journal of Nanoscience and Technology, 4 (1). pp. 338-341. ISSN 2455-0191. (Published) http://jacsdirectory.com/journal-of-nanoscience-and-technology/admin/issues/20180402054716_4-1-11%20JNST18105%20Published.pdf 10.30799/jnst.105.18040111 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Temperature sensitivity based on channel length of FinFET transistor |
| title | Temperature sensitivity based on channel length of FinFET transistor |
| title_full | Temperature sensitivity based on channel length of FinFET transistor |
| title_fullStr | Temperature sensitivity based on channel length of FinFET transistor |
| title_full_unstemmed | Temperature sensitivity based on channel length of FinFET transistor |
| title_short | Temperature sensitivity based on channel length of FinFET transistor |
| title_sort | temperature sensitivity based on channel length of finfet transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf |