Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

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Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simu...

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Bibliographic Details
Main Author:	Hashim, Yasir
Format:	Conference or Workshop Item
Language:	English
Published:	IOP Publishing 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf

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