Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simu...
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| Format: | Conference or Workshop Item |
| Language: | English |
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IOP Publishing
2017
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| Online Access: | http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf |
| _version_ | 1848820862447255552 |
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| author | Hashim, Yasir |
| author_facet | Hashim, Yasir |
| author_sort | Hashim, Yasir |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C. |
| first_indexed | 2025-11-15T02:16:12Z |
| format | Conference or Workshop Item |
| id | ump-19252 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T02:16:12Z |
| publishDate | 2017 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-192522017-12-07T02:31:02Z http://umpir.ump.edu.my/id/eprint/19252/ Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type Hashim, Yasir TK Electrical engineering. Electronics Nuclear engineering This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C. IOP Publishing 2017 Conference or Workshop Item PeerReviewed application/pdf en cc_by http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf Hashim, Yasir (2017) Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type. In: IOP Conference Series: Materials Science and Engineering, International Research and Innovation Summit (IRIS2017) , 6-7 May 2017 , Melaka, Malaysia. pp. 1-6., 226 (012123). ISSN 1757-899X (Published) http://dx.doi.org/10.1088/1757-899X/226/1/012123 10.1088/1757-899X/226/1/012123 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Yasir Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title | Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title_full | Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title_fullStr | Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title_full_unstemmed | Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title_short | Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type |
| title_sort | investigation of finfet as a temperature nano-sensor based on channel semiconductor type |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf |