Ohmic contact formation of gallium nitride and electrical properties improvement

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Ohmic contact formation of gallium nitride and electrical properties improvement

In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow sho...

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Bibliographic Details
Main Author:	Aiman, Mohd Halil
Format:	Thesis
Language:	English
Published:	2016
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/16957/ http://umpir.ump.edu.my/id/eprint/16957/19/Ohmic%20contact%20formation%20of%20gallium%20nitride%20and%20electrical%20properties%20improvement.pdf

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