Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various pr...
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| Format: | Conference or Workshop Item |
| Language: | English |
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Universiti Malaysia Pahang
2016
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| Online Access: | http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf |
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| author | Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir |
| author_facet | Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir |
| author_sort | Zulkifly, Aziz |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized
solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which
suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were
red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually
caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC |
| first_indexed | 2025-11-15T02:03:39Z |
| format | Conference or Workshop Item |
| id | ump-15911 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T02:03:39Z |
| publishDate | 2016 |
| publisher | Universiti Malaysia Pahang |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-159112018-10-31T07:03:02Z http://umpir.ump.edu.my/id/eprint/15911/ Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir TK Electrical engineering. Electronics Nuclear engineering Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC Universiti Malaysia Pahang 2016 Conference or Workshop Item PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf Zulkifly, Aziz and Ayib Rosdi, Zainun and Saifful Kamaluddin, Muzakir (2016) Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films. In: Proceedings of The National Conference for Postgraduate Research (NCON-PGR 2016) , 24-25 September 2016 , Universiti Malaysia Pahang (UMP), Pekan, Pahang. pp. 206-211.. (Published) http://ee.ump.edu.my/ncon/wp-content/uploads/2016/10/Proceeding-NCON-PGR-2016.zip |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title | Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title_full | Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title_fullStr | Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title_full_unstemmed | Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title_short | Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films |
| title_sort | influence of annealing temperatures on properties in chelate based cui thin films |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf |