A New Approach for Dimensional Optimization of Inverters in 6T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

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A New Approach for Dimensional Optimization of Inverters in 6T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

This study explores dimensional optimization at different high logic-level voltages for six silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. This study is the first to demonstrate diameter and length of nanowires with different logic voltage level (Vdd) optimization...

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Bibliographic Details
Main Author:	Hashim, Yasir
Format:	Article
Language:	English English
Published:	American Scientific Publishers 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/15045/ http://umpir.ump.edu.my/id/eprint/15045/1/16JNN-12608.pdf http://umpir.ump.edu.my/id/eprint/15045/7/ftech-yasir-2017.pdf

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