Device characterization based on stressor, geometric and process design considerations of fet technology / Nurul Aida Farhana Othman

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Device characterization based on stressor, geometric and process design considerations of fet technology / Nurul Aida Farhana Othman

The downscaling of complementary metal-oxide-semiconductor (CMOS) device has been tremendously feasible in the past couple of decades. This action has led to a constant escalation of devices count in a dense integrated circuit, hence an outstanding application of Moore’s law to the industry especial...

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Bibliographic Details
Main Author:	Nurul Aida Farhana, Othman
Format:	Thesis
Published:	2018
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://studentsrepo.um.edu.my/9990/ http://studentsrepo.um.edu.my/9990/1/Nurul_Aida_Farhana_Binti_Othman.jpg http://studentsrepo.um.edu.my/9990/8/aida.pdf

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