Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen
Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characteriz...
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| Format: | Thesis |
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2018
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| Online Access: | http://studentsrepo.um.edu.my/9656/ http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf |
| _version_ | 1848773972465811456 |
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| author | Soh, Wee Chen |
| author_facet | Soh, Wee Chen |
| author_sort | Soh, Wee Chen |
| building | UM Research Repository |
| collection | Online Access |
| description | Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C. |
| first_indexed | 2025-11-14T13:50:54Z |
| format | Thesis |
| id | um-9656 |
| institution | University Malaya |
| institution_category | Local University |
| last_indexed | 2025-11-14T13:50:54Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | um-96562021-06-30T19:44:34Z Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen Soh, Wee Chen T Technology (General) Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C. 2018-07 Thesis NonPeerReviewed application/pdf http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg application/pdf http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf Soh, Wee Chen (2018) Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen. Masters thesis, University Of Malaya. http://studentsrepo.um.edu.my/9656/ |
| spellingShingle | T Technology (General) Soh, Wee Chen Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_full | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_fullStr | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_full_unstemmed | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_short | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_sort | formation of germanium oxynitride as buffer layer on germanium substrate / soh wee chen |
| topic | T Technology (General) |
| url | http://studentsrepo.um.edu.my/9656/ http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf |