Effect of Oxidation temperature on the thin film samarium (III) oxide growth on germanium subtrate / Gary Tan
Searching for high-κ gate oxide has been an important task in the semiconductor industry for further downscaling. In this study, pure samarium (Sm) metal was first sputtered on germanium (Ge) substrate, and then proceeded to thermal oxidation for 15 minutes at varying oxidation temperatures of 300°C...
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| Format: | Thesis |
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2018
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| Online Access: | http://studentsrepo.um.edu.my/9560/ http://studentsrepo.um.edu.my/9560/1/Gary_Tan.jpg http://studentsrepo.um.edu.my/9560/9/Gary_Tan_KQJ170003.pdf |
