Degradation analysis based on design considerations of advanced-process MOSFET / Ainul Fatin Muhammad Alimin

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Degradation analysis based on design considerations of advanced-process MOSFET / Ainul Fatin Muhammad Alimin

The unceasing scaling of complementary metal-oxide-semiconductor (CMOS) technology has contributed to the steady increase in transistors performance for the past decades. However, it will also increase the power densities which will eventually leads to the increase in temperatures and other scaling...

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Bibliographic Details
Main Author:	Ainul Fatin, Muhammad Alimin
Format:	Thesis
Published:	2018
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://studentsrepo.um.edu.my/9116/ http://studentsrepo.um.edu.my/9116/1/Ainul_Fatin_Muhammad_Alimin.bmp http://studentsrepo.um.edu.my/9116/11/ainul.pdf

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