Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires / Qian Guanghan
This work reports the investigation of Ni catalyzed Si-based nanowires grown by hot-wire chemical vapor deposition at different filament temperatures on crystal Si (c-Si) and glass substrates These nanowires include NiSi, NiSi/Si core-shell and NiSi/SiC core-shell nanowires that grown by varying...
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| Format: | Thesis |
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2015
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| Online Access: | http://studentsrepo.um.edu.my/6514/ http://studentsrepo.um.edu.my/6514/1/qianguanghan.pdf |
| _version_ | 1848773185984528384 |
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| author | Qian, Guanghan |
| author_facet | Qian, Guanghan |
| author_sort | Qian, Guanghan |
| building | UM Research Repository |
| collection | Online Access |
| description | This work reports the investigation of Ni catalyzed Si-based nanowires grown
by hot-wire chemical vapor deposition at different filament temperatures on crystal Si
(c-Si) and glass substrates These nanowires include NiSi, NiSi/Si core-shell and
NiSi/SiC core-shell nanowires that grown by varying the filament temperature, Tf. The
NiSi nanowires were grown at lowest Tf of 1150C. At Tf of 1450C, the nanowires
were structured by crystalline Si and amorphous Si which Si attributed to the core and
shell of the nanowires, respectively. The nanowires exhibited NiSi/SiC heterostructure
core-shell nanowires with increase in Tf to 1850C. The morphological properties of
these nanowires were strongly dependent on the substrate and filament temperature. The
nanowires grown on c-Si substrate showed a better alignment and a higher density as
compared to the nanowires grown on glass substrate. The effect of hydrogen heat
transfer by the filament temperature demonstrated a phase change from NiSi to Ni2Si
with increase in filament temperature. The increasing of filament temperature enhances
gas phase reactions thus generates more SiC clusters which consequently formed the
SiC shell. These NiSi/SiC core-shell nanowires were structured by single crystalline
NiSi and amorphous SiC respectively. The roles of the filament temperature on the
growth and constituted phase change of the nanowires are discussed in detail. Last but
not least, the core-shell nanowires exhibited a significant hetero-junction electrical
characteristic which could be a great potential application in nano-diode devices.
Keywords: Heterostructure, core-shell nanowires, HWCVD, SiC, NiSi |
| first_indexed | 2025-11-14T13:38:24Z |
| format | Thesis |
| id | um-6514 |
| institution | University Malaya |
| institution_category | Local University |
| last_indexed | 2025-11-14T13:38:24Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | um-65142016-09-22T09:00:30Z Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires / Qian Guanghan Qian, Guanghan Q Science (General) This work reports the investigation of Ni catalyzed Si-based nanowires grown by hot-wire chemical vapor deposition at different filament temperatures on crystal Si (c-Si) and glass substrates These nanowires include NiSi, NiSi/Si core-shell and NiSi/SiC core-shell nanowires that grown by varying the filament temperature, Tf. The NiSi nanowires were grown at lowest Tf of 1150C. At Tf of 1450C, the nanowires were structured by crystalline Si and amorphous Si which Si attributed to the core and shell of the nanowires, respectively. The nanowires exhibited NiSi/SiC heterostructure core-shell nanowires with increase in Tf to 1850C. The morphological properties of these nanowires were strongly dependent on the substrate and filament temperature. The nanowires grown on c-Si substrate showed a better alignment and a higher density as compared to the nanowires grown on glass substrate. The effect of hydrogen heat transfer by the filament temperature demonstrated a phase change from NiSi to Ni2Si with increase in filament temperature. The increasing of filament temperature enhances gas phase reactions thus generates more SiC clusters which consequently formed the SiC shell. These NiSi/SiC core-shell nanowires were structured by single crystalline NiSi and amorphous SiC respectively. The roles of the filament temperature on the growth and constituted phase change of the nanowires are discussed in detail. Last but not least, the core-shell nanowires exhibited a significant hetero-junction electrical characteristic which could be a great potential application in nano-diode devices. Keywords: Heterostructure, core-shell nanowires, HWCVD, SiC, NiSi 2015 Thesis NonPeerReviewed application/pdf http://studentsrepo.um.edu.my/6514/1/qianguanghan.pdf Qian, Guanghan (2015) Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires / Qian Guanghan. Masters thesis, University of Malaya. http://studentsrepo.um.edu.my/6514/ |
| spellingShingle | Q Science (General) Qian, Guanghan Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires / Qian Guanghan |
| title | Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ Qian Guanghan
|
| title_full | Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ Qian Guanghan
|
| title_fullStr | Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ Qian Guanghan
|
| title_full_unstemmed | Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ Qian Guanghan
|
| title_short | Studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ Qian Guanghan
|
| title_sort | studies on the growth, structural and electrical properties of silicon-based heterostructure nanowires
/ qian guanghan |
| topic | Q Science (General) |
| url | http://studentsrepo.um.edu.my/6514/ http://studentsrepo.um.edu.my/6514/1/qianguanghan.pdf |