Simulation framework of NBTI degradation in nano-scale p-MOSFETs from the perspective of hydrogen and non-hydrogen transport formalism / Hanim Hussin

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Simulation framework of NBTI degradation in nano-scale p-MOSFETs from the perspective of hydrogen and non-hydrogen transport formalism / Hanim Hussin

The rapid downscaling of contemporary bulk CMOS devices has worsened the negative bias temperature instability (NBTI) of p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistors (p-MOSFETs), which consequently degrades the performance and reduces the operational lifetime of the device. The main...

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Bibliographic Details
Main Author:	Hussin, Hanim
Format:	Thesis
Published:	2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://studentsrepo.um.edu.my/5936/ http://studentsrepo.um.edu.my/5936/1/ThesisHanim2015_040915.pdf

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