Study of Schottky and Poole-Frenkel conduction mechanism in Fe304-gamma-Fe2O3/SiO2/n-type Si system / Adrian Chung Ning Hann

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Study of Schottky and Poole-Frenkel conduction mechanism in Fe304-gamma-Fe2O3/SiO2/n-type Si system / Adrian Chung Ning Hann

The advances of metal oxide semiconductor technology (MOS) have led to smaller devices being made where sizes of the devices keep getting smaller and compact. Hence, all the components of metal oxide semiconductor sizes are to be reduced without affecting the overall efficiency of the metal oxide se...

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Bibliographic Details
Main Author:	Adrian Chung , Ning Hann
Format:	Thesis
Published:	2021
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://studentsrepo.um.edu.my/13418/ http://studentsrepo.um.edu.my/13418/1/Adrian_Chung_Ning_Hann.jpg http://studentsrepo.um.edu.my/13418/8/adrian.pdf

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