High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman

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High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman

The unique structural properties and engineering characteristics of nitride-based materials have given them a special position in semiconductor applications. Alloys with a tuned energy bandgap from ultraviolet to infrared wavelengths are possible to be deposited in maintaining the wurtzite crystal s...

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Bibliographic Details
Main Author:	Mohd Nazri , Abd Rahman
Format:	Thesis
Published:	2021
Subjects:	Q Science (General) QC Physics
Online Access:	http://studentsrepo.um.edu.my/12834/ http://studentsrepo.um.edu.my/12834/2/Mohd_Nazri.pdf http://studentsrepo.um.edu.my/12834/1/Mohd_Nazri.pdf

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