Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy
This research is a study on the possibilities of trap-assisted tunneling conduction mechanism in Zirconium Oxynitride (ZrON) after Zirconium (Zr) with thickness 5nm was sputtered on Silicon Carbide (SiC) substrate which then underwent simultaneous nitridation and oxidation in Nitrous Oxide (N2O) for...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2020
|
| Subjects: | |
| Online Access: | http://studentsrepo.um.edu.my/12126/ http://studentsrepo.um.edu.my/12126/1/Nicklaane_Krishnamoorthy.jpg http://studentsrepo.um.edu.my/12126/8/nick.pdf |
| _version_ | 1848774571406131200 |
|---|---|
| author | Nicklaane, Krishnamoorthy |
| author_facet | Nicklaane, Krishnamoorthy |
| author_sort | Nicklaane, Krishnamoorthy |
| building | UM Research Repository |
| collection | Online Access |
| description | This research is a study on the possibilities of trap-assisted tunneling conduction mechanism in Zirconium Oxynitride (ZrON) after Zirconium (Zr) with thickness 5nm was sputtered on Silicon Carbide (SiC) substrate which then underwent simultaneous nitridation and oxidation in Nitrous Oxide (N2O) for 15 minutes in 4 different ambient temperatures of 400°C, 500°C, 700⁰C, 900°C. Electrical properties of the samples were then characterized by fabricating Al-gate MOS capacitors onto the film surface. Of all 4 samples, sample that was oxidized/nitrided at 500°C demonstrated to have the highest dielectric breakdown (EB) of 5.05 MV/cm and lowest EB was by sample that was oxidized/nitrided at 900°C. The 1st step breakdown in J-E curve by samples oxidized/nitrided at 500°C, 700°C and 900°C were minor but there were also 2nd step breakdown and this explains that those samples could be a trap assisted tunneling (TAT) conduction mechanism. From graph of ln (JE) vs 1/E, the intercept and slope from the regression line have given the value for lowest trap density and highest trap energy at -35.8 x 1021 cm-3 and 5.92eV, respectively. |
| first_indexed | 2025-11-14T14:00:25Z |
| format | Thesis |
| id | um-12126 |
| institution | University Malaya |
| institution_category | Local University |
| last_indexed | 2025-11-14T14:00:25Z |
| publishDate | 2020 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | um-121262021-04-13T20:48:28Z Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy Nicklaane, Krishnamoorthy TJ Mechanical engineering and machinery This research is a study on the possibilities of trap-assisted tunneling conduction mechanism in Zirconium Oxynitride (ZrON) after Zirconium (Zr) with thickness 5nm was sputtered on Silicon Carbide (SiC) substrate which then underwent simultaneous nitridation and oxidation in Nitrous Oxide (N2O) for 15 minutes in 4 different ambient temperatures of 400°C, 500°C, 700⁰C, 900°C. Electrical properties of the samples were then characterized by fabricating Al-gate MOS capacitors onto the film surface. Of all 4 samples, sample that was oxidized/nitrided at 500°C demonstrated to have the highest dielectric breakdown (EB) of 5.05 MV/cm and lowest EB was by sample that was oxidized/nitrided at 900°C. The 1st step breakdown in J-E curve by samples oxidized/nitrided at 500°C, 700°C and 900°C were minor but there were also 2nd step breakdown and this explains that those samples could be a trap assisted tunneling (TAT) conduction mechanism. From graph of ln (JE) vs 1/E, the intercept and slope from the regression line have given the value for lowest trap density and highest trap energy at -35.8 x 1021 cm-3 and 5.92eV, respectively. 2020-09 Thesis NonPeerReviewed application/pdf http://studentsrepo.um.edu.my/12126/1/Nicklaane_Krishnamoorthy.jpg application/pdf http://studentsrepo.um.edu.my/12126/8/nick.pdf Nicklaane, Krishnamoorthy (2020) Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy. Masters thesis, University of Malaya. http://studentsrepo.um.edu.my/12126/ |
| spellingShingle | TJ Mechanical engineering and machinery Nicklaane, Krishnamoorthy Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title | Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title_full | Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title_fullStr | Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title_full_unstemmed | Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title_short | Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy |
| title_sort | trap-assisted tunneling mechanism of zirconium oxynitride (zron) thin film on silicon carbide / nicklaane krishnamoorthy |
| topic | TJ Mechanical engineering and machinery |
| url | http://studentsrepo.um.edu.my/12126/ http://studentsrepo.um.edu.my/12126/1/Nicklaane_Krishnamoorthy.jpg http://studentsrepo.um.edu.my/12126/8/nick.pdf |