Neodymium oxide thin film gate oxide on silicon substrate / Hetherin Karuppiah

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Neodymium oxide thin film gate oxide on silicon substrate / Hetherin Karuppiah

Metallic neodymium (Nd) films were sputtered on silicon substrates. The films then underwent thermal oxidation andthermal oxynitridation at various durations of 5 min, 10 min, 15 min, and 20 min. The optimized time was utilized to carry out thermal oxidation and thermal oxynitridation at various tem...

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Bibliographic Details
Main Author:	Hetherin , Karuppiah
Format:	Thesis
Published:	2018
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://studentsrepo.um.edu.my/11817/ http://studentsrepo.um.edu.my/11817/1/Hetherin.pdf http://studentsrepo.um.edu.my/11817/2/Hetherin.pdf

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