Optimization of N-Channel trench power MOSFET using 2k factorial design method

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Optimization of N-Channel trench power MOSFET using 2k factorial design method

The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2k factorial design method for achieving...

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Bibliographic Details
Main Authors:	Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain
Format:	Article
Published:	Universiti Kebangsaan Malaysia 2009
Online Access:	http://journalarticle.ukm.my/24/

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