Distribution of ga vacancies in Zn diffused GaAs
A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by...
| Main Authors: | , |
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| Format: | Article |
| Published: |
1992
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| Online Access: | http://journalarticle.ukm.my/1300/ |
| _version_ | 1848809484701401088 |
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| author | Zahari Mohamed Darus, Iftekhar Ahmed, |
| author_facet | Zahari Mohamed Darus, Iftekhar Ahmed, |
| author_sort | Zahari Mohamed Darus, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | A detailed discussion on the distribution and the characteristics of vacancy profiles in
Zn diffused GaAs is presented in this paper. Vacancies are consumed during the
diffusion process, creating short-fall in the equilibrium vacancy concentration. The
crystal tries to recover this short-fall by vacancy diffusion and vacancy generation
process. In course of time, the depth in the vacancy short-fall decreases, but this
short-fall propagates deeper into the crystal |
| first_indexed | 2025-11-14T23:15:21Z |
| format | Article |
| id | ukm-1300 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T23:15:21Z |
| publishDate | 1992 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ukm-13002011-10-11T03:45:36Z http://journalarticle.ukm.my/1300/ Distribution of ga vacancies in Zn diffused GaAs Zahari Mohamed Darus, Iftekhar Ahmed, A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by vacancy diffusion and vacancy generation process. In course of time, the depth in the vacancy short-fall decreases, but this short-fall propagates deeper into the crystal 1992 Article PeerReviewed Zahari Mohamed Darus, and Iftekhar Ahmed, (1992) Distribution of ga vacancies in Zn diffused GaAs. Jurnal Kejuruteraan, 4 . http://www.ukm.my/jkukm/index.php/jkukm |
| spellingShingle | Zahari Mohamed Darus, Iftekhar Ahmed, Distribution of ga vacancies in Zn diffused GaAs |
| title | Distribution of ga vacancies in Zn diffused GaAs |
| title_full | Distribution of ga vacancies in Zn diffused GaAs |
| title_fullStr | Distribution of ga vacancies in Zn diffused GaAs |
| title_full_unstemmed | Distribution of ga vacancies in Zn diffused GaAs |
| title_short | Distribution of ga vacancies in Zn diffused GaAs |
| title_sort | distribution of ga vacancies in zn diffused gaas |
| url | http://journalarticle.ukm.my/1300/ http://journalarticle.ukm.my/1300/ |