Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
| Main Authors: | Burhanuddin Yeop Majfis, M. J. Morant |
|---|---|
| Format: | Article |
| Published: |
1991
|
| Online Access: | http://journalarticle.ukm.my/1293/ |
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