Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
| Main Authors: | , |
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| Format: | Article |
| Published: |
1991
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| Online Access: | http://journalarticle.ukm.my/1293/ |
| _version_ | 1848809482707009536 |
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| author | Burhanuddin Yeop Majfis, M. J. Morant, |
| author_facet | Burhanuddin Yeop Majfis, M. J. Morant, |
| author_sort | Burhanuddin Yeop Majfis, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS)
device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been
studied at room temperature. The SRO films were deposited by atmospheric pressure
chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and
N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the
deposition time from 0.6 to 2 minutes |
| first_indexed | 2025-11-14T23:15:19Z |
| format | Article |
| id | ukm-1293 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T23:15:19Z |
| publishDate | 1991 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ukm-12932011-10-11T03:45:25Z http://journalarticle.ukm.my/1293/ Switching characteristics of SRO-MISS devices Burhanuddin Yeop Majfis, M. J. Morant, The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the deposition time from 0.6 to 2 minutes 1991 Article PeerReviewed Burhanuddin Yeop Majfis, and M. J. Morant, (1991) Switching characteristics of SRO-MISS devices. Jurnal Kejuruteraan, 3 . pp. 47-56. http://www.ukm.my/jkukm/index.php/jkukm |
| spellingShingle | Burhanuddin Yeop Majfis, M. J. Morant, Switching characteristics of SRO-MISS devices |
| title | Switching characteristics of SRO-MISS devices |
| title_full | Switching characteristics of SRO-MISS devices |
| title_fullStr | Switching characteristics of SRO-MISS devices |
| title_full_unstemmed | Switching characteristics of SRO-MISS devices |
| title_short | Switching characteristics of SRO-MISS devices |
| title_sort | switching characteristics of sro-miss devices |
| url | http://journalarticle.ukm.my/1293/ http://journalarticle.ukm.my/1293/ |